Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2006-08-29
2006-08-29
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
C216S083000, C216S092000, C216S093000, C134S001300, C134S030000, C156S345110, C438S745000
Reexamination Certificate
active
07097784
ABSTRACT:
A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.
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“Notification of Reasons for Rejection” issued by the Japanese Patent Office for Japanese Patent Application Serial No. 2002-378799, and English translation thereof.
Iimori Hiroyasu
Ogawa Yoshihiro
Okuchi Hisashi
Tomita Hiroshi
Ahmed Shamim
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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