Etching method and apparatus

Details Etching method and apparatus Etching method and apparatus

1992-08-11

1994-05-24

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156662, 156643, 156646, H01L 2100

Patent

active

053145755

ABSTRACT:
A reactive ion etching method is described in which a silicon compound film formed on an underlying layer or a substrate is etched through a mask layer by a two-stage procedure. In the two-stage procedure, part of the silicon compound film is first etched with a gas containing a hydrogen-free carbon fluoride gas at a high etching rated and then with a gas containing a hydrogen-containing carbon fluoride gas while reducing the damage on the underlying layer or substrate. The apparatus for carrying out the method is also disclosed.

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patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4631248 (1986-12-01), Pasch
patent: 4657619 (1987-04-01), O'Donnell
patent: 4764245 (1988-08-01), Grewal
patent: 4842707 (1989-06-01), Kinoshita
J. Poisson et al., "VIA Contact Dry Etching Using a Plasma LCW Resistance Photoresist", 1986 Proceedings Third International IEEE VLSI Multilevel Interconnection Conference, Jun. 9-10, 1986, pp. 308-318.
"CF, RIE Pre-Etch During Etchback of Sidewall Formation", IBM Technical Disclosure Bulletin, vol. 29, No. 1, Jun. 1986, pp. 110-111.
Stocker, "Selective Reactive Ion Etching of Silicon Nitride on Oxide in a Multifacet (`HEX`) Plasma Etching Machine", Journal of Vacuum Science & Technology, vol. 7, No. 3, Part I, May/Jun. 1988, pp. 1145-1149.
Smith, Semiconductor World by Press Journal, Jan. 1987, pp. 121-127.

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