Etching method and apparatus

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask is reusable

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216 69, 216 71, B44C 122

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active

057664943

ABSTRACT:
According to the present invention, there is provided an etching method comprising the steps of forming a first thin film on a surface of a substrate to be processed, supporting the substrate to be processed, forming a second thin film serving to deactivate an active gas used for etching the first thin film, on a surface of a mask plate piece used as the first thin film mask, fixing the mask plate piece so that the first thin film and the second thin film oppose to each other with a predetermined distance therebetween, and etching the first thin film by supplying the active gas to the first thin film via the mask plate piece.

REFERENCES:
patent: 4612432 (1986-09-01), Sharp-Geisler
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5292400 (1994-03-01), Mumola
patent: 5298103 (1994-03-01), Steinberg et al.
patent: 5445709 (1995-08-01), Kojima et al.
patent: 5539609 (1996-07-01), Collins et al.

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