Etching method

Details Etching method Etching method

1995-09-21

1998-01-06

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 1566431, H01L 213065

Patent

active

057050813

ABSTRACT:
An etching apparatus comprises a pair of electrodes provided to face each other in a processing vessel, a permanent magnet for forming a magnetic field substantially parallel to a surface of a to-be-processed object which is placed between the paired electrodes, a gas introduction section for introducing etching gas into the processing vessel, a high-frequency generator for applying high-frequency voltage to the paired electrodes for generating plasma, and a high-frequency control section for preventing plasma from being unevenly distributed by starting and stopping the application of high-frequency voltage by the high-frequency generator at fixed intervals.

REFERENCES:
patent: 4357195 (1982-11-01), Gorin
patent: 4863549 (1989-09-01), Grunwald
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 4950377 (1990-08-01), Huebner
patent: 5160408 (1992-11-01), Long
patent: 5411624 (1995-05-01), Hirano et al.
patent: 5431774 (1995-07-01), Douglas

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