Etching method

Details Etching method Etching method

1992-01-22

1995-05-23

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 20419235, 216 81, H01L 2100

Patent

active

054177987

ABSTRACT:
Reactive ion etching of diamond using oxygen plasma roughs the surface of diamond due to the strong bombardment of oxygen ions with various kinetic energy. A metal grid with holes is installed between the oxygen plasma and the diamond. Since the metal grid is biased in order to prevent oxygen plasma from being in contact with the diamond, the oxygen ions which have passed the grid will bombard the surface of the diamond with common, low energy. The etched surface becomes smooth.

REFERENCES:
patent: 4352725 (1982-10-01), Tsukada
patent: 4416724 (1983-11-01), Fischer
patent: 4496449 (1985-01-01), Rocca et al.
patent: 4957591 (1990-09-01), Sato et al.
patent: 5160405 (1992-11-01), Miyauchi
Anonymous, "Grounding grid for flexible diode etcher--is inserted between substrate and counter electrodes, and grounded to substrate electrode dark space shield", World Patents Index Latest, Week 8616, Mar. 19, 1986, Derwent Publication Ltd. and Research Disclosure, vol. 263, No. 65, Mar. 1986.
N. N. Efremow et al, "Ion-beam-assisted etching of diamond", J. Vac. Sci. Technol. B3(1), pp. 416-418 Jan./Feb. 1985.
Sugita et al, "Carving seals and inlaying of patterns on a diamond surface by using microsputtering methods", Topics, Tokyo College of Science, Apr. 1988, pp. 40-41.

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