Etching method

Details Etching method Etching method

1983-09-23

1984-11-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156653, 156657, 1566591, 1566611, 204192E, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

044849788

ABSTRACT:
The disclosure relates to techniques for etching layered materials to produce features with beveled edges, for example, wells in silicon oxide layers employed in integrated circuit fabrication. An anisotropic etch may be employed to form wells with vertical walls in the silicon oxide layer, and an isotropic etch may be employed to bevel peripheral corners of the walls. In preferred embodiments, a double mask of a photoresist layer on an underlying thin film may be used to define the limits of the anisotropic and isotropic etches, respectively.

REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4372034 (1983-02-01), Bohr
patent: 4417947 (1983-11-01), Pan

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