Etching method

Details Etching method Etching method

1988-10-28

1989-12-05

Lacey, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, C03C 1500

Patent

active

048850543

ABSTRACT:
An etching method for etching a masked silicon substrate in a vessel by introducing into the vessel an etching gas containing a gaseous chloride of silicon and a nitrogen-containing gas and converting the etching gas introduced in the vessel into a plasma. Ions and radicals are formed from the etching gas under plasma conditions, the ions impinging against the substrate in a sputtering action, and the radicals acting on the substrate to produce a volatile substance. The sputtering action and the volatile substances produce even etched surfaces without surface defects and simultaneously prevent the formation of a white powder, thus avoiding unetched or insufficiently etched portions and portions appearing to be black. In addition, this method makes it possible to realize superior anisotropism in the etching, while increasing the speed and selectivity of etching.

REFERENCES:
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patent: 4069090 (1978-01-01), Reinberg et al.
patent: 4079506 (1978-03-01), Suzuki et al.
patent: 4383885 (1983-05-01), Maydan et al.
patent: 4412119 (1983-10-01), Komatsu et al.
patent: 4422897 (1983-12-01), Horwitz
patent: 4430151 (1984-02-01), Tsukada
patent: 4450042 (1984-05-01), Purdes
patent: 4490209 (1984-12-01), Hartman
patent: 4544444 (1985-10-01), Chang
patent: 4601779 (1986-07-01), Abernathy et al.

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