Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-04-18
2006-04-18
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S718000, C438S724000, C438S725000
Reexamination Certificate
active
07030028
ABSTRACT:
A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layer208and a mask layer210formed over the organic low k film208using at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.
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Hayashi Yoshihiro
Inazawa Koichiro
Kinoshita Keizo
Kobayashi Noriyuki
Mori Takuya
Finnegan Henderson Farabow Garrett & Dunner LLP
Norton Nadine G.
Tokyo Electron Limited
Tran Binh X.
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