Etching method

Details Etching method Etching method

1986-06-26

1987-11-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156654, 156662, 20419232, 219121LJ, 219121LM, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047055936

ABSTRACT:
Materials whose elemental constituents are selected from groups III and V of the Periodic Table are photochemically etched in a reducing environment. Etching is carried out by illuminating a halogenated hydrocarbon gas, e.g. methyl iodide, with ultra-violet light in the vicinity of the material. The reducing environment is provided by the presence of sufficient hydrogen to suppress the effect of any oxygen leaking into the system.
Methods according to the invention may be used in particular in the production of opto-electronic devices.

REFERENCES:
patent: 3095341 (1963-06-01), Ligenza
patent: 4518456 (1985-05-01), Bjorkholm
patent: 4624736 (1986-11-01), Gee et al.
Brewer et al., "Laser-Assisted Dry Etching", 28 Solid State Technology No. 4, 273-78 (Apr. 1981).
Ashby, "Photochemical Dry Etching of GaAs", 45 Applied Physics Letters No. 8, 892-94 (Oct. 1984).
Chang, "Hydrogen Plasma Etching of GaAs and its Oxide", 81-2 Extended Abstracts of the Journal of the Electrochemical Society 648-49 (Oct. 1981).
Tu et al., "Surface Etching Kinetics of Hydrogen Plasma on InP", 41 Applied Physics Letters No. 1, 80-82 (Jul. 1982).
Ehrlich et al., "Laser-Induced Microscopic Etching of GaAs and InP," Appl. Phys. Lett. 36(8), Apr. 15, 1980, pp. 698-700.

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