Etching metal films with complexing chloride plasma

Details Etching metal films with complexing chloride plasma Etching metal films with complexing chloride plasma

1989-04-24

1990-04-24

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156635, 156664, 156666, C23F 100, H01L 23306

Patent

active

049197509

ABSTRACT:
A method for dry etching metals that form low volatility chlordes, in which Z-Cl reaction products are controllably introduced into a conventional Cl-based plasma independent of the workpiece. The Z-Cl products (e.g., AlCl.sub.3, GaCl.sub.3, etc.) are metal chlorides that have both electron acceptor and chloride donor properties. Thus, metals M (e.g., cobalt, copper and nickel) that usually produce low volatility chlorides can be controllably complexed to form high volatility Z.sub.x Cl.sub.y M.sub.z reaction products.

REFERENCES:
patent: 4364793 (1982-12-01), Graves
Coburn, J. W., Plasma-Assisted Etching, Plasma Chemistry and Plasma Processing, vol. 2, No. 1, 1982, pp. 1-40.
Coburn and Winters, Plasma Etching-A Discussion of Mechanisms, Journal of Vacuum Science Technology, vol. 16, No. 2, Mar./Apr., 1979, pp. 391-402.
"Reactive Species Generation for Plasma Etching by Ion Bombardment of a Suitable Compound", B. H. Desilets et al, IBM TDB, Jun. 1979, vol. 22, No. 1, pp. 112-113.
"Gaseous Chloride complexes with Halogen Bridges-Homo-Complexes-Hetero-complexes", H. Schafer, Angewandte Chemie International Edition in English, Dec. 1976, vol. 15, No. 12, pp. 713-727.
Park et al, "Halide Formation and Etching of Cu Thin Films with Cl.sub.2 and Br.sub.2 ", Journal of Vacuum Science & Technology A 4 (1986), Mar./Apr., No. 2, N.Y., N.Y., Second Series, pp. 168-172.
Winters, "Etch Products from the Reaction on Cl.sub.2 with a (100) and Cu(100) and XeF.sub.2 with W(111) and Nb", Journal of Vacuum Science & Technology/B 3 (1985), Jan.-Feb., No. 1, Second Series, Woodbury, N.Y., USA, pp. 9-15.

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