Etching metal films with complexing chloride plasma

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156635, 156664, 156666, C23F 100, H01L 23306

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049197509

ABSTRACT:
A method for dry etching metals that form low volatility chlordes, in which Z-Cl reaction products are controllably introduced into a conventional Cl-based plasma independent of the workpiece. The Z-Cl products (e.g., AlCl.sub.3, GaCl.sub.3, etc.) are metal chlorides that have both electron acceptor and chloride donor properties. Thus, metals M (e.g., cobalt, copper and nickel) that usually produce low volatility chlorides can be controllably complexed to form high volatility Z.sub.x Cl.sub.y M.sub.z reaction products.

REFERENCES:
patent: 4364793 (1982-12-01), Graves
Coburn, J. W., Plasma-Assisted Etching, Plasma Chemistry and Plasma Processing, vol. 2, No. 1, 1982, pp. 1-40.
Coburn and Winters, Plasma Etching-A Discussion of Mechanisms, Journal of Vacuum Science Technology, vol. 16, No. 2, Mar./Apr., 1979, pp. 391-402.
"Reactive Species Generation for Plasma Etching by Ion Bombardment of a Suitable Compound", B. H. Desilets et al, IBM TDB, Jun. 1979, vol. 22, No. 1, pp. 112-113.
"Gaseous Chloride complexes with Halogen Bridges-Homo-Complexes-Hetero-complexes", H. Schafer, Angewandte Chemie International Edition in English, Dec. 1976, vol. 15, No. 12, pp. 713-727.
Park et al, "Halide Formation and Etching of Cu Thin Films with Cl.sub.2 and Br.sub.2 ", Journal of Vacuum Science & Technology A 4 (1986), Mar./Apr., No. 2, N.Y., N.Y., Second Series, pp. 168-172.
Winters, "Etch Products from the Reaction on Cl.sub.2 with a (100) and Cu(100) and XeF.sub.2 with W(111) and Nb", Journal of Vacuum Science & Technology/B 3 (1985), Jan.-Feb., No. 1, Second Series, Woodbury, N.Y., USA, pp. 9-15.

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