Etching memory

Details Etching memory Etching memory

2005-09-06

2005-09-06

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S723000, C438S724000

Reexamination Certificate

active

06939806

ABSTRACT:
The etching method of the present invention for forming a hole having a high aspect ratio in a silicon oxide film formed on a substrate via a silicon nitride film includes the step of performing etching using an etching gas composed of a mixture of Ar gas, O2gas, C5F8gas and CH2F2gas.

REFERENCES:
patent: 5650339 (1997-07-01), Saito et al.
patent: 5780338 (1998-07-01), Jeng et al.
patent: 6337285 (2002-01-01), Ko
patent: 6448179 (2002-09-01), Kim et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6716766 (2004-04-01), Ko
patent: 9-92640 (1997-04-01), None

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