Etching material and etching process

Details Etching material and etching process Etching material and etching process

1997-02-13

1999-03-23

Utech, Benjamin

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438197, 438694, 438751, 438754, H01L 21302

Patent

active

058858881

ABSTRACT:
An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide layer formed on the surface of a material containing aluminum as the principal component thereof.

REFERENCES:
patent: 3825454 (1974-07-01), Kikuchi et al.
patent: 4003772 (1977-01-01), Hanazono et al.
patent: 4045302 (1977-08-01), Gibbs et al.
patent: 4336111 (1982-06-01), Graunke
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 5430320 (1995-07-01), Lee
patent: 5639344 (1997-06-01), Konuma et al.
"Controlling The Interfacial Oxide Layer of Ti-Al Contacts with the CrO.sub.3 -H.sub.3 PO.sub.4 Etch"; Shankoff et al.; J. Elect. Soc. (1978), 125(3); pp. 467-471.

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