Etching end point detecting method based on junction current mea

Details Etching end point detecting method based on junction current mea Etching end point detecting method based on junction current mea

1998-03-04

2000-10-03

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

438 13, 438 17, 438741, H01L 2120

Patent

active

06127237&

ABSTRACT:
A pn junction is formed at a to-be-etched depth in an etching region of a semiconductor body and a reverse bias voltage is applied to the pn junction to form a depletion layer. Then, the semiconductor body is etched while monitoring the reverse bias current flowing via the pn junction and a point at which the bias current has abruptly increased is determined as the etching end point.

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