Etching composition and use thereof

Details Etching composition and use thereof Etching composition and use thereof

1997-04-04

1998-07-14

McCamish, Marion E.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438745, 438906, 216 92, 252 792, C23F 110

Patent

active

057803633

ABSTRACT:
An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulfuric acid and about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone is effective in removing polymer residue from a substrate, and especially from an integrated circuit chip having aluminum lines thereon.

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