Etching, cleaning and drying methods using supercritical...

Details Etching, cleaning and drying methods using supercritical... Etching, cleaning and drying methods using supercritical...

2007-05-23

2011-12-27

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S692000, C438S706000, C257S304000, C257S309000, C252S079100, C252S079200, C252S079300, C252S079400, C134S001000, C134S026000, C134S030000

Reexamination Certificate

active

08084367

ABSTRACT:
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

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Notice to File a Response/Amendment to the Examination Report corresponding to Korean Application No. 10-2007-0001514 mailed Dec. 4, 2007.

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