Etching bias reduction

Details Etching bias reduction Etching bias reduction

2008-01-08

2008-01-08

Rosasco, S. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S394000

Reexamination Certificate

active

11252290

ABSTRACT:
A patterning device for implementing a pattern on a substrate includes a main pattern feature and a sacrificial pattern feature. Both the main pattern feature and the sacrificial pattern feature are transferable to an overlying layer on the substrate. The sacrificial pattern feature is positioned a distance from the main pattern feature and is configured to have a dimension less than an etching bias of an etching process. The etching process is capable of transferring the main pattern feature to an underlying layer, such that the sacrificial pattern feature adjusts an etching behavior of the main pattern feature and is eliminated from the underlying layer.

REFERENCES:
patent: 5766803 (1998-06-01), Michael et al.
patent: 6569761 (2003-05-01), Chang
patent: 2006/0024965 (2006-02-01), Yang
patent: 2006/0286690 (2006-12-01), Cao
Sato, Shunichiro, “Advanced Pattern Correction Method for Fabricating Highly Accurate Reticles”, Photomask and Next Generation Lithography Mask Technology IX, Proceedings of SPIE, vol. 4754, 2002, pp. 196-204.

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