Etching apparatus using neutral beam

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With means to generate and to direct a reactive ion etchant...

Reexamination Certificate

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Reexamination Certificate

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06926799

ABSTRACT:
A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.

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D.B. Oaks, W.G. Lawrence and A.H. Gelb, “Selective, Anisotropic and Damage-Free SiO2 Etching with a Hyperthermal Atomic Beam”, Physical Sciences Inc., 20 New England Business Center, Andover, MA 01810, 7 pages.
M.J. Goeckner, T.K. Bennett, Jaeyoung Park, Z. Wang and S.A. Cohen, “Reduction of Residual Charge in Surface-Neutralization-Based Neutral Beams”, 1997 2nd Int'l Symposium on Plasma Process-Induced Damage; May 13-14, pp. 175-178.
B.A. Helmer and D.B. Graves “Molecular dymanics simulations of Cl 2 impacts onto a chlorinated silicon surface: Energies and angles of the reflected Cl2 and CL fragments”, J.Vac. Sci. Technol. A 17 (5), Sep./Oct. 1999, pp. 2759-2770.
Takashi Yunogami, Ken'etsu Yokogawa, and Tatsumi Mizutani, “Development of neutral-beam-assisted etcher”, J.Vac. Sci. Technol. A 13(3), May/Jun. 1995, pp. 952-958.

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