Etching apparatus and method therefor

Details Etching apparatus and method therefor Etching apparatus and method therefor

1993-09-08

1995-12-19

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 74, 156345, 1566431, 1566461, H05H 100

Patent

active

054761824

ABSTRACT:
An etching apparatus for etching an insulating film of an object to be processed having the insulating film comprises a first chamber into which an inert gas is introduced, a plasma generating section for converting the inert gas to a plasma in the first chamber, a second chamber, which communicates with the first chamber, for receiving a reactive gas for etching the insulating film and generating radicals of the reactive gas therein, and a support electrode for supporting the object to be processed in the second chamber and attracting ions in the plasma of the inert gas to the object to be processed. The radicals is generated when the reactive gas introduced into the second chamber is excited by the plasma of the inert gas diffused from the first chamber to the second chamber. The insulating film and the radicals react with each other by the assist of the ions of the inert gas, thereby etching the insulating film.

REFERENCES:
patent: 5138973 (1992-08-01), Davis et al.

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