Etching apparatus and method

Details Etching apparatus and method Etching apparatus and method

1982-03-25

1983-08-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 1566591, 204192E, 204298, 430313, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044002351

ABSTRACT:
In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the wafers in a unique fashion on one of two spaced-apart electrodes in the reaction chamber of a dry etching system. In particular, the front surface of each wafer is maintained in substantially the same plane as that of surrounding dielectric material. Additionally, the thickness of the surrounding dielectric material is designed to be considerably greater than the thickness of any dielectric material in contact with the back surface of each wafer. In that way, the entire front surface extent of each wafer is influenced by a relatively uniform electric field. Moreover, the available field in the chamber is in effect focussed onto the wafer surfaces, thereby achieving a relatively high etch rate characterized by low contamination.

REFERENCES:
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 4232110 (1980-11-01), Taylor

Affiliated with

Also associated with

Rating

Etching apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching apparatus and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1946237