Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-09-12
1999-06-08
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041922, 20429825, 216 65, 216 66, 216 87, 216 94, 427129, 427130, 427554, 427555, 427556, C23C 1434, C23F 402, B05D 306
Patent
active
059102357
ABSTRACT:
A stationary vacuum deposition machine is used in a method for controlling the height of bumps formed in annular regions of substrates; the substrates are transported to the machine in a first condition in which each substrate is subject to a chemicapillary effect when subjected to localized thermal heating and melting. The machine includes a series of stations including an entrance station for receiving substrates into the machine, first and second predetermined stations, and a transport for operating in a cycle with each cycle including a transport phase and a stationary phase such that the transport causes all the substrates that are in the machine to be moved during the transport phase, and be temporarily held stationary during the stationary phase, such that during each stationary phase a predetermined one of the stations is occupied by one of the substrates while each of a plurality of others of the stations is occupied by a respective one of a plurality of others of the substrates. The machine also includes a plurality of vacuum deposition stations, each for operating during each stationary phase such that each vacuum deposition station causes a thin film to be deposited on a respective one of the substrates and an ion gun for etching a surface of the substrate occupying the first predetermined station while the substrate is held stationary, in an environment such that the first condition of the substrate is changed to a second condition that substantially reduces its susceptibility to the chemicapillary effect. The machine also includes a main chamber for providing an environment that reduces the substrate's risk of reversion to the first condition when the transport moves the substrate from the first predetermined station to the second predetermined station and scanning beam generator for directing a scanning beam at the substrate occupying the second predetermined station while the substrate is held stationary to form the bumps in the annular region of the substrate, wherein the height of bumps is controlled.
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Gornicki Stella Zofia
Krajnovich Douglas J.
McDonald Rodney G.
Nguyen Nam
Shara Milad
Western Digital Corporation
Young Leo J.
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