Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2004-04-26
2010-02-02
Norton, Nadine G (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S062000, C216S065000, C219S121690, C219S121660, C219S121680, C438S487000
Reexamination Certificate
active
07655152
ABSTRACT:
An etching method includes applying a first electromagnetic radiation to an area of structure, thereby altering a characteristic of the structure in the area, and applying a second electromagnetic radiation to the structure, the second electromagnetic radiation configured to selectively ablate the structure based on the characteristic.
REFERENCES:
patent: 4780177 (1988-10-01), Wojnarowski et al.
patent: 4786358 (1988-11-01), Yamazaki et al.
patent: 4834834 (1989-05-01), Ehrlich
patent: 4842677 (1989-06-01), Wojnarowski et al.
patent: 4877480 (1989-10-01), Das
patent: 4877939 (1989-10-01), Duley
patent: 4925523 (1990-05-01), Braren et al.
patent: 4961052 (1990-10-01), Tada
patent: 5024724 (1991-06-01), Hirono
patent: 5221422 (1993-06-01), Das et al.
patent: 5221426 (1993-06-01), Tessier et al.
patent: 5260235 (1993-11-01), Dooley et al.
patent: 5364493 (1994-11-01), Hunter, Jr. et al.
patent: 5446245 (1995-08-01), Iwayama et al.
patent: 5509556 (1996-04-01), Balz et al.
patent: 5514618 (1996-05-01), Hunter, Jr. et al.
patent: 5580473 (1996-12-01), Shinohara
patent: 5679967 (1997-10-01), Janai et al.
patent: 5723843 (1998-03-01), Muggli
patent: 5741431 (1998-04-01), Shih
patent: 5840622 (1998-11-01), Miles et al.
patent: 5843363 (1998-12-01), Mitwalsky et al.
patent: 5874011 (1999-02-01), Ehrlich
patent: 5958268 (1999-09-01), Engelsberg et al.
patent: 6025256 (2000-02-01), Swenson et al.
patent: 6588340 (2003-07-01), Friedman
patent: 6617541 (2003-09-01), Wadman
patent: 2002/0017116 (2002-02-01), Koyama
patent: 1 067 593 (2001-01-01), None
J. Bonse et al., Femtosecond laser ablation of silicon-modification thresholds and morphology, Applied Physics A 74, 19-25 (2002).
Uzi Landman et al., Molecular dynamics simulation of epitaxial crystal growth from the melt. I. Si(100), Physical Review B. 37, 9, 4637-4646, (1988).
Bonse et al. (Applied Physics A. Materials Science and Processing, 74, 19-20 (2002)).
Uzi Landman et al. (Physical Review B, vol. 37, No. 9, Mar. 15, 1988).
Long Greg
Nelson Curt
Dahimene Mahmoud
Hewlett--Packard Development Company, L.P.
Norton Nadine G
LandOfFree
Etching does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4186276