Etched-source static induction transistor

Details Etched-source static induction transistor Etched-source static induction transistor

1983-09-12

1984-03-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576E, 29580, 148175, 148187, 156657, 1566611, 156662, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

044379250

ABSTRACT:
A gate-source structure and fabrication method for a static induction transistor. The method and the device are embodied by the epitaxial layer of, for example, high resistivity p-type semiconductor material grown on an epitaxial layer of high resistivity n-type semiconductor material. A silicon dioxide layer with source and gate windows is formed on the p-type epitaxial layer. Source grooves are formed in the p-type epitaxial layer at source window locations and the grooves are diffused with n-type impurities to form a diffusion region which extends to connect with the n-type epitaxial layer. Source and gate electrodes are formed in the source and gate windows.

REFERENCES:
patent: 3847687 (1974-11-01), Davidsohn
patent: 3853496 (1974-12-01), Kim

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