Etched metal trace with reduced RF impendance resulting from...

Details Etched metal trace with reduced RF impendance resulting from... Etched metal trace with reduced RF impendance resulting from...

2005-03-08

2005-03-08

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S774000

Reexamination Certificate

active

06864581

ABSTRACT:
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.

REFERENCES:
patent: 3573540 (1971-04-01), Osepchuk
patent: 4165558 (1979-08-01), Armitage, Jr. et al.
patent: 5434094 (1995-07-01), Kobiki et al.
patent: 5952704 (1999-09-01), Yu et al.
patent: 5998299 (1999-12-01), Krishnan
patent: 6191023 (2001-02-01), Chen
patent: 6326673 (2001-12-01), Liou
patent: 6362012 (2002-03-01), Chi et al.
patent: 6444517 (2002-09-01), Hsu et al.
patent: 6703710 (2004-03-01), Hopper et al.

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