Etched metal trace with reduced RF impendance resulting from...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S750000, C257S774000

Reexamination Certificate

active

06864581

ABSTRACT:
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.

REFERENCES:
patent: 3573540 (1971-04-01), Osepchuk
patent: 4165558 (1979-08-01), Armitage, Jr. et al.
patent: 5434094 (1995-07-01), Kobiki et al.
patent: 5952704 (1999-09-01), Yu et al.
patent: 5998299 (1999-12-01), Krishnan
patent: 6191023 (2001-02-01), Chen
patent: 6326673 (2001-12-01), Liou
patent: 6362012 (2002-03-01), Chi et al.
patent: 6444517 (2002-09-01), Hsu et al.
patent: 6703710 (2004-03-01), Hopper et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Etched metal trace with reduced RF impendance resulting from... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etched metal trace with reduced RF impendance resulting from..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etched metal trace with reduced RF impendance resulting from... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3385994

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.