Etchant with selectivity for doped silicon dioxide over undoped

Details Etchant with selectivity for doped silicon dioxide over undoped Etchant with selectivity for doped silicon dioxide over undoped

1998-06-22

2000-09-12

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438724, 438740, H01L 21302

Patent

active

061177911

ABSTRACT:
An etchant including C.sub.2 H.sub.x F.sub.y, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six. The etchant etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C.sub.2 H.sub.x F.sub.y -containing etchant. C.sub.2 H.sub.x F.sub.y may be employed as either a primary etchant or as an additive to another etchant or etchant mixture.

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