Etchant with selectivity for doped silicon dioxide over...

Details Etchant with selectivity for doped silicon dioxide over... Etchant with selectivity for doped silicon dioxide over...

2005-04-05

2005-04-05

Chen, Kin-Chan (Department: 1765)

Compositions

Etching or brightening compositions

C252S079300, C438S723000

Reexamination Certificate

active

06875371

ABSTRACT:
An etchant including C2HxFy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFymay be employed as either a primary etchant or as an additive to another etchant or etchant mixture.

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