Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2011-05-17
2011-05-17
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
C438S694000, C257SE21009, C257SE21022, C257SE21025, C257SE21151, C257SE21162, C257SE21291, C257SE21413, C257SE21414
Reexamination Certificate
active
07943519
ABSTRACT:
An etchant, a method for fabricating a multi-layered interconnection line using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant for the multi-layered line comprised of molybdenum/copper/molybdenum nitride illustratively includes 10-20 wt % hydrogen peroxide, 1-5 wt % organic acid, a 0.1-1 wt % triazole-based compound, a 0.01-0.5 wt % fluoride compound, and deionized water as the remainder.
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Choung Jong-Hyun
Kim Shi-Yul
Park Hong-Sick
Shin Won-suk
Innovation Counsel LLP
Jones Eric W
Le Thao X
Samsung Electronics Co,. Ltd.
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