Etchant gas and a method for etching transistor gates

Details Etchant gas and a method for etching transistor gates Etchant gas and a method for etching transistor gates

1998-02-12

2000-03-14

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

252 791, 438720, 438721, 438700, 438701, H01L 213065, C09K 1300

Patent

active

060372656

ABSTRACT:
A method for producing a semiconductor device from a silicon substrate supporting a patterned hardmask layer, a tungsten silicide layer, a polysilicon layer, and a gate oxide layer. The method comprises etching the tungsten silicide layer and the polysilicon layer with an etchant gas comprising carbon monoxide (CO) and chlorine (Cl.sub.2). The etchant gas may also include hydrogen bromide (HBr) or a nitrogen-containing gas (e.g., N.sub.2).

REFERENCES:
patent: 4659426 (1987-04-01), Fuller et al.
patent: 4855017 (1989-08-01), Douglas
patent: 5556521 (1996-09-01), Ghanbari
patent: 5560804 (1996-10-01), Higuchi et al.

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