Etchant for silicon dioxide films disposed atop silicon or metal

Details Etchant for silicon dioxide films disposed atop silicon or metal Etchant for silicon dioxide films disposed atop silicon or metal

1978-12-29

1980-10-28

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 252 791, H01L 21306

Patent

active

042305233

ABSTRACT:
An etchant comprising a solution of hydrogen fluoride dissolved in an organic solvent such as glycerine. The solution is substantially free of unbound water and ammonium fluoride. The etchant is particularly suitable for removing silicon dioxide disposed atop a metallic silicide formed in a silicon semiconductor where the silicon may be exposed.

REFERENCES:
patent: 2399134 (1946-04-01), Miller et al.
patent: 3448055 (1969-06-01), Mickelson et al.
patent: 3642549 (1972-02-01), Couture et al.
patent: 3650969 (1972-03-01), Baltakmens et al.
patent: 3979241 (1976-09-01), Maeda et al.
patent: 4040897 (1977-08-01), Blish et al.
patent: 4087367 (1978-05-01), Rioult et al.
Gajda, "Selective . . . Glass", IBM Technical Disclosure Bulletin, vol. 9, No. 11 (4/67), p. 1476.

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