Etchant for revealing dislocations in II-VI compounds

Details Etchant for revealing dislocations in II-VI compounds Etchant for revealing dislocations in II-VI compounds

1989-02-27

1990-01-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156655, 156662, 252 792, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048971529

ABSTRACT:
The invention provides an etchant and a method of using the etchant for revealing dislocations on low index planes in group II-VI compounds such as (Hg.sub.x Cd.sub.(1-x))Te. The etchant has a composition proportional to 80 ml water, 10 ml of hydrochloric acid, 20 ml of nitric acid, and 8 gm of potassium dichromate. In another embodiment, the concentration of nitric acid is reduced to 0%. The surface of the compound being examined is exposed to the etchant for about 20 second to 6 minutes depending upon the crystallographic plane being examined. The surface is then rinsed in water. For the {111}B plane, additional rinses in a 0.05% solution of bromine in methanol and methanol are used.

REFERENCES:
M. Brown et al., Determination of Slip Planes in Cd.sub.x Hg.sub.(1-x) Te by Etching of Dislocations Introduced by Microhardness Indentations, J. Phys. Colloque C6, 40, 151, (1979).
K. Nakagawa et al., Observation of Dislocations in Cadmium Telluride by Cathodoluminescence Microscopy, Appl. Phys. Letter, 34(9), May 1, 1979, pp. 574-575.
Y-C Lu et al., Etch Pit Studies in CdTe Crystals, J. Vac. Sci. Technol., A3(1), Jan./Feb. 1985, pp. 264-270.
E. P. Warekois et al., Crystallographic Polarity in the II-VI Compounds, J. Appl. Phys., vol. 34, No. 9, Feb. 1962, pp. 690-696.
S. G. Parker and J. E. Pinnel, Revelation of Dislocations in (Hg,Cd)Te by an Etch Technique, J. Electrochem. Soc., vol. 118, No. 11, pp. 1868-1869, Nov. 1971.

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