Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-12-19
2006-12-19
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S748000, C257SE21251
Reexamination Certificate
active
07151058
ABSTRACT:
In a method for removing a nitride layer of a semiconductor device, an etchant including about 15 to about 40 percent by volume of hydrofluoric acid, about 15 to about 60 percent by volume of phosphorous acid, and about 25 to about 45 percent by volume of deionized water is prepared. The etchant is provided onto a nitride layer that is formed on a bevel, a front side or a backside of a substrate to remove the nitride layer. The substrate is rinsed using deionized water, and then the substrate is dried. The etchant rapidly removes the nitride layer at a relatively low temperature to avoid damage to the substrate.
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Everhart Caridad
Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt PLLC
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