Etchant for conductive materials and method of manufacturing...

Details Etchant for conductive materials and method of manufacturing... Etchant for conductive materials and method of manufacturing...

2005-11-02

2009-10-20

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C257SE21582, C216S100000, C216S102000

Reexamination Certificate

active

07605091

ABSTRACT:
The present invention provides a method for manufacturing a thin film transistor (TFT) array panel by forming a gate line having a gate electrode on an insulating substrate; sequentially depositing a gate insulating layer and a semiconductor layer on the gate line; forming a drain electrode and a data line having a source electrode on the gate insulating and semiconductor layers; and forming a pixel electrode connected to the drain electrode. These elements can be formed by photo-etching using an etchant containing 65 wt % to 75 wt % of phosphoric acid, 0.5 wt % to 15 wt % of nitric acid, 2 wt % to 15 wt % of acetic acid, 0.1 wt % to 8.0 wt % of a potassium compound, and deionized water. Each element of the TFT array panel can be patterned with the etchant of the invention under similar conditions, which simplifies a manufacturing process and saves costs and results in TFT elements having a good profile.

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