Etchant, etching method, and method of fabricating semiconductor

Details Etchant, etching method, and method of fabricating semiconductor Etchant, etching method, and method of fabricating semiconductor

1996-07-01

1997-12-09

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438745, 252 794, H01L 2120, H01L 2144, B44C 122, C09K 1306

Patent

active

056960352

ABSTRACT:
An etchant includes an aqueous solution containing citric acid, ammonium citrate, and hydrogen peroxide, wherein the mol ratio of ammonium citrate to citric acid is not less than 1. Using this etchant, a WSi layer on an InAlAs layer can be etched selectively with respect to the InAlAs layer.

REFERENCES:
patent: 5419808 (1995-05-01), Kitano
patent: 5468343 (1995-11-01), Kitano
patent: 5486710 (1996-01-01), Kitano

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