Etchant composition, patterning conductive layer and...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level

Reexamination Certificate

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C257SE21485

Reexamination Certificate

active

07985982

ABSTRACT:
An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

REFERENCES:
patent: 7357878 (2008-04-01), Park et al.
patent: 7605091 (2009-10-01), Park et al.
patent: 2006/0094241 (2006-05-01), Park et al.
patent: 1020060039631 (2006-05-01), None
patent: 1020060066349 (2006-06-01), None
patent: 1020060094934 (2006-08-01), None

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