Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-07
2008-07-22
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S008000
Reexamination Certificate
active
07402510
ABSTRACT:
A method for forming bumps is disclosed. First, a substrate having an adhesive, a barrier, and a wetting layer thereon is provided. Next, a patterned photoresist is formed on the wetting layer, in which the patterned photoresist includes at least one opening for exposing a portion of the wetting layer. Next, a solder is deposited in the opening, and a stripping process is performed to remove the patterned photoresist. Next, a first etchant is utilized to perform a first etching process for etching a portion of the wetting and barrier layers by utilizing the solder as a mask, in which the first etchant is selected from the group consisting of: sulfuric acid, phosphoric acid, ferric chloride, ammonium persulfate, and potassium monopersulfate. Next, a second etchant is utilized to perform a second etching process removing a portion of the adhesive layer, and a reflow process is performed to form a bump.
REFERENCES:
patent: 2003/0157792 (2003-08-01), Tong et al.
patent: 2004/0072416 (2004-04-01), Fay
Chen Hui-Hung
Ng Hiew Watt
Tsai Chi-Long
Wu En-Chieh
Advanced Semiconductor Engineering Inc.
Hsu Winston
Le Thao P.
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