Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-07-13
2009-10-27
Deo, Duy-Vu N (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S754000, C216S083000, C216S084000, C216S100000, C216S101000, C216S105000
Reexamination Certificate
active
07608547
ABSTRACT:
Provided are an etchant used for a transparent conductive oxide layer and a method for fabricating a liquid crystal display (LCD) using the etchant. The etchant includes 2-5 wt % sulfuric acid, 0.02-10 wt % hydrogen sulfate of alkali metal, and deionized water as the remainder.
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Choung Jong-hyun
Kim Shi-yul
Park Hong-sick
Shin Won-suk
Deo Duy-Vu N
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
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