Etchant and method for fabricating electric device including...

Details Etchant and method for fabricating electric device including... Etchant and method for fabricating electric device including...

2008-03-24

2010-06-15

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S745000, C438S754000, C216S105000, C216S109000

Reexamination Certificate

active

07737033

ABSTRACT:
The present embodiments relate to an etchant and a method of fabricating an electric device including a thin film transistor. The etchant includes a fluorine ion (F−) source, hydrogen peroxide (H2O2), a sulfate, a phosphate, an azole-based compound, and a solvent. The etchant and method of fabricating an electric device including a thin film transistor, can etch a multi-layered film including copper layer, and a titanium or titanium alloy layer in a batch and can provide a thin film transistor having a good pattern profile at high yield. When reusing the etchant, uniform etching performance can be maintained with a long replacement period of the etchant, and therefore costs can be saved.

REFERENCES:
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patent: 2003/0124851 (2003-07-01), Jo et al.
patent: 2004/0262569 (2004-12-01), Cho et al.
patent: 2005/0176604 (2005-08-01), Lee et al.
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patent: 1020050000682 (2005-01-01), None
patent: 2006-0099089 (2006-09-01), None
KR1020060099089, a machine translation of Korean Patent to Baik et al., Sep. 19, 2006.
Extended European search report in 5 pages.

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