Etchant and method for fabricating a thin film transistor...

Compositions – Etching or brightening compositions

Reexamination Certificate

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C438S754000, C216S091000, C216S101000, C216S102000

Reexamination Certificate

active

07955521

ABSTRACT:
Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by:in-line-formulae description="In-line Formulae" end="lead"?M(OH)XLY  (1)in-line-formulae description="In-line Formulae" end="tail"?where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

REFERENCES:
patent: 2002/0086244 (2002-07-01), Hanson
patent: 2003/0107023 (2003-06-01), Chae et al.
patent: 2003/0168431 (2003-09-01), Lee et al.
patent: 2004/0072444 (2004-04-01), Park et al.
patent: 2004/0262569 (2004-12-01), Cho et al.
patent: 2005/0040139 (2005-02-01), Gonzalez et al.
patent: 2002-231706 (2002-08-01), None
patent: 10-2003-0034402 (2003-05-01), None
Chemblink, http://www.chemblink.com/products/631-61-8;Ammonium acetate; no date available.

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