Etch with uniformity control

Details Etch with uniformity control Etch with uniformity control

2006-08-15

2006-08-15

Norton, Nadine G. (Department: 1765)

Etching a substrate: processes

Etching and coating occur in the same processing chamber

C216S079000, C216S080000, C216S081000, C438S714000, C438S719000, C438S723000, C438S725000

Reexamination Certificate

active

07090782

ABSTRACT:
A method of forming semiconductor devices on a wafer is provided. An etch layer is formed over a wafer. A photoresist mask is formed over the etch layer. The photoresist mask is removed only around an outer edge of the wafer to expose the etch layer around the outer edge of the wafer. A deposition gas is provided comprising carbon and hydrogen containing species. A plasma is formed from the deposition gas. A polymer layer is deposited on the exposed etch layer around the outer edge of the wafer, wherein the polymer is formed from the plasma from the deposition gas. The etch layer is etched through the photoresist mask, while consuming the photoresist mask and the polymer deposited on the exposed etch layer around the outer edge of the wafer.

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International Search Report, dated Jan. 16, 2006.

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