Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-03-29
2008-10-28
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21252
Reexamination Certificate
active
07442649
ABSTRACT:
A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3is provided into the plasma chamber. A plasma is formed from the NF3gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3gas.
REFERENCES:
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4904341 (1990-02-01), Blaugher et al.
patent: 4956312 (1990-09-01), Van Laarhoven
patent: 6001538 (1999-12-01), Chen et al.
patent: 6686293 (2004-02-01), Kim et al.
patent: 7001833 (2006-02-01), Bao et al.
patent: 2002/0076935 (2002-06-01), Maex et al.
patent: 2003/0109143 (2003-06-01), Hsieh et al.
patent: 2003/0211750 (2003-11-01), Kim et al.
patent: 2004/0063308 (2004-04-01), Bao et al.
patent: 2005/0026430 (2005-02-01), Kim et al.
patent: 2005/0048787 (2005-03-01), Negishi et al.
patent: 1503405 (2005-02-01), None
patent: 03060121 (1991-03-01), None
International Search Report, dated Sep. 11, 2006.
Charatan Robert
Kim Ji-soo
Lee Sang-heon
Sadjadi S.M. Reza
Worsham Binet A.
Anya Igwe U.
Baumeister Bradley W.
Beyer Law Group LLP
Lam Research Corporation
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