Etch stop layer in poly-metal structures

Details Etch stop layer in poly-metal structures Etch stop layer in poly-metal structures

2007-11-20

2007-11-20

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S585000, C438S656000, C438S648000

Reexamination Certificate

active

11561988

ABSTRACT:
In accordance with one embodiment of the present invention, a method of interfacing a poly-metal structure and a semiconductor substrate is provided where an etch stop layer is provided in a polysilicon region of the structure. The present invention also addresses the relative location of the etch stop layer in the polysilicon region and a variety of structure materials and oxidation methods.

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 5368686 (1994-11-01), Tatsumi et al.
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5770507 (1998-06-01), Chen
patent: 5776823 (1998-07-01), Agnello et al.
patent: 5891784 (1999-04-01), Cheung et al.
patent: 5940315 (1999-08-01), Cowles
patent: 5940718 (1999-08-01), Ibok et al.
patent: 5989959 (1999-11-01), Araki
patent: 6043562 (2000-03-01), Keeth
patent: 6063704 (2000-05-01), Dermirlioglu
patent: 6072223 (2000-06-01), Noble
patent: 6075274 (2000-06-01), Wu et al.
patent: 6090660 (2000-07-01), Noble, Jr.
patent: 6097049 (2000-08-01), Goebel et al.
patent: 6107145 (2000-08-01), Dennison et al.
patent: 6121125 (2000-09-01), Lee
patent: 6165883 (2000-12-01), Hiura
patent: 6171981 (2001-01-01), Byun
patent: 6232209 (2001-05-01), Fujiwara et al.
patent: 6245605 (2001-06-01), Hwang et al.
patent: 6875679 (2005-04-01), Agarwal
patent: 7166527 (2007-01-01), Agarwal
patent: 361208850 (1986-09-01), None

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