Etch stop layer in poly-metal structures

Details Etch stop layer in poly-metal structures Etch stop layer in poly-metal structures

2006-08-22

2006-08-22

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S595000, C438S514000

Reexamination Certificate

active

07094673

ABSTRACT:
In accordance with one embodiment of the present invention, a method of forming an etch stop layer in a semiconductor structure is provided. A polysilicon layer on the semiconductor substrate and ions are implanted into the polysilicon layer to form an etch stop layer. An oxide layer can be provided between the semiconductor substrate and the polysilicon layer.

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4978637 (1990-12-01), Liou et al.
patent: 5368686 (1994-11-01), Tatsumi et al.
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5776823 (1998-07-01), Agnello et al.
patent: 5854115 (1998-12-01), Gardner et al.
patent: 5891784 (1999-04-01), Cheung et al.
patent: 5940315 (1999-08-01), Cowles
patent: 5940718 (1999-08-01), Ibok et al.
patent: 5989959 (1999-11-01), Araki
patent: 6043562 (2000-03-01), Keeth
patent: 6063704 (2000-05-01), Demirlioglu
patent: 6072223 (2000-06-01), Noble
patent: 6075274 (2000-06-01), Wu et al.
patent: 6090660 (2000-07-01), Noble, Jr.
patent: 6097049 (2000-08-01), Goebel et al.
patent: 6107145 (2000-08-01), Dennison et al.
patent: 6121125 (2000-09-01), Lee
patent: 6165883 (2000-12-01), Hiura
patent: 6232209 (2001-05-01), Fujiwara et al.
patent: 6245605 (2001-06-01), Hwang et al.
patent: 6268622 (2001-07-01), Shone et al.
patent: 6320246 (2001-11-01), Gilton
patent: 6344364 (2002-02-01), Gilton
patent: 6348405 (2002-02-01), Ohuchi
patent: 6355524 (2002-03-01), Tuan et al.
patent: 6379981 (2002-04-01), Gilton
patent: 6429109 (2002-08-01), Zheng et al.
patent: 6458646 (2002-10-01), Divakaruni et al.
patent: 6630405 (2003-10-01), Hong et al.
patent: 6699777 (2004-03-01), Agarwal
patent: 361208850 (1986-09-01), None
patent: 363114236 (1988-05-01), None
patent: 363156341 (1988-06-01), None

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