Etch stop layer in poly-metal structures

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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Details

C438S585000, C438S257000, C438S648000

Reexamination Certificate

active

06875679

ABSTRACT:
In accordance with one embodiment of the present invention, a method of interfacing a poly-metal stack and a semiconductor substrate is provided where an etch stop layer is provided in a polysilicon region of the stack. The present invention also addresses the relative location of the etch stop layer in the polysilicon region and a variety of stack materials and oxidation methods. The etch stop layer may be patterned within the poly or may be a continuous conductive etch stop layer in the poly. The present invention also relates more broadly to a process for forming wordline architecture of a memory cell. In accordance with another embodiment of the present invention, a semiconductor structure is provided comprising a poly-metal stack formed over a semiconductor substrate where the interface between an oxidation barrier placed over the stack and an oxidized portion of the stack lies along the sidewall of the poly. A semiconductor structure is also provided where a conductive layer is present in the poly region of the poly-metal stack. The present invention also relates more broadly to a memory cell array and a computer system including the poly-metal stack of the present invention.

REFERENCES:
patent: 5368686 (1994-11-01), Tatsumi et al.
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5776823 (1998-07-01), Agnello et al.
patent: 5891784 (1999-04-01), Cheung et al.
patent: 5940315 (1999-08-01), Cowles
patent: 5989959 (1999-11-01), Araki
patent: 6043562 (2000-03-01), Keeth
patent: 6063704 (2000-05-01), Demirlioglu
patent: 6072223 (2000-06-01), Noble
patent: 6075274 (2000-06-01), Wu et al.
patent: 6090660 (2000-07-01), Noble, Jr.
patent: 6097049 (2000-08-01), Goebel et al.
patent: 6107145 (2000-08-01), Dennison et al.
patent: 6121125 (2000-09-01), Lee
patent: 6165883 (2000-12-01), Hiura
patent: 6232209 (2001-05-01), Fujiwara et al.
patent: 6245605 (2001-06-01), Hwang et al.
patent: 6268622 (2001-07-01), Shone et al.
patent: 6320246 (2001-11-01), Gilton
patent: 6344364 (2002-02-01), Gilton
patent: 6348405 (2002-02-01), Ohuchi
patent: 6355524 (2002-03-01), Tuan et al.
patent: 6379981 (2002-04-01), Gilton
patent: 6429109 (2002-08-01), Zheng et al.
patent: 6458646 (2002-10-01), Divakaruni et al.
patent: 6630405 (2003-10-01), Hong et al.
patent: 6699777 (2004-03-01), Agarwal
patent: 361208850 (1986-09-01), None
patent: 363114236 (1988-05-01), None
patent: 363156341 (1988-06-01), None

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