Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-11-15
1999-12-21
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438703, 438723, 438740, H01L 21318
Patent
active
060048751
ABSTRACT:
A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N--H bonds, O--H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH.sub.3 flow, decreasing the SiH.sub.4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
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Cathey David A.
Rolfson J. Brett
Ward Valerie A.
Winchester Karen M.
Bowers Charles
Micro)n Technology, Inc.
Whipple Matthew
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