Etch stop control for MEMS device formation

Details Etch stop control for MEMS device formation Etch stop control for MEMS device formation

2005-02-22

2005-02-22

Wille, Douglas (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S052000, C438S053000

Reexamination Certificate

active

06858541

ABSTRACT:
A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.

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Ashruf, C. M., et al., “Electrochemical etch stop Engineering for Bulk Micromachining”,Mechatronics, vol. 8 , (5), Pergamon Press, Oxford, G.B, ISSN: 0957-4158,(Aug. 01, 1998),595-612.

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