Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-18
2000-09-12
Elms, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438652, 438656, 438660, 438687, 438688, H01L 2144
Patent
active
06117758&
ABSTRACT:
In a method of manufacturing a semiconductor device, a first wiring layer is formed on a semiconductor substrate. An interlevel insulating film is formed on the semiconductor substrate to cover the first wiring layer. A wiring groove is formed in the interlevel insulating film so as to pass a contact hole formed in the interlevel insulating film to such a depth as to expose the first wiring layer. A contact is formed in the contact hole by depositing a first conductive material on the first wiring layer exposed at the bottom of the contact hole. An island made of the first conductive material and formed on the surface of the interlevel insulating film upon forming the contact is etched and removed. A second wiring layer is formed in contact with the contact by burying a second conductive material in the wiring groove.
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Brown et al, Development and Production Integration of a Planarized AlCu Interconnect Process for Submicron CMOS, (Proceeding of the International Society of Optical Engineering, Oct. 1995, vol. 2636), pp. 234-243.
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"The chemical vapor deposition of aluminum for interconnect and via application : an integration overview" by R. W. Fiordalice, Proceedings Metallization and Interconnect Systems for ULSI Application in 1996.
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Elms Richard
NEC Corporation
Wilson Christian D.
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