Etch rate loading improvement

Details Etch rate loading improvement Etch rate loading improvement

1996-03-29

2000-01-25

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438729, 438742, 216 68, H01L 2100

Patent

active

060178256

ABSTRACT:
A method in a plasma processing system having a top electrode and a bottom electrode for etching through a portion of a selected layer of a layer stack of a wafer. The method includes the step of etching at least partially through the selected layer while providing a first radio frequency (RF) signal having a first RF frequency to the top electrode. The method further includes the step of providing a second RF signal having a second RF frequency lower than the first RF frequency to the bottom electrode.

REFERENCES:
patent: 5272417 (1993-12-01), Ohmi
patent: 5464499 (1995-11-01), Moslehi et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5591301 (1997-01-01), Grewal
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5685941 (1997-11-01), Forster et al.

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