Etch profile shaping through wafer temperature control

Details Etch profile shaping through wafer temperature control Etch profile shaping through wafer temperature control

1995-03-13

1997-02-25

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15665911, 1566571, 1566511, 216 67, 216 37, 216 80, H01L 21302

Patent

active

056056001

ABSTRACT:
In a method of etch profile shaping through wafer temperature control during an etch process wherein deposition of a passivation film is temperature dependent, a gap between a semiconductor wafer to be etched and a cathode is pressurized at a first pressure, and the pressure in the gap is changed to a second pressure at a predetermined time during the etch process, thereby altering heat transfer from the semiconductor wafer to the cathode. The temperature of the wafer is adjusted one or more times during an etching process to control profile shaping of deep trenches, contact holes and shapes for mask opening shaping during the etch process.

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