Etch process selective to cobalt silicide for formation of integ

Details Etch process selective to cobalt silicide for formation of integ Etch process selective to cobalt silicide for formation of integ

1997-06-23

1999-08-03

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438754, 438755, H01L 21465

Patent

active

059337575

ABSTRACT:
An etch process selective to cobalt silicide is described for the selective removal of titanium and/or titanium nitride, unreacted cobalt, and cobalt reaction products other than cobalt silicide, remaining after the formation of cobalt silicide on an integrated circuit structure on a semiconductor substrate in preference to the removal of cobalt silicide. The first step comprises contacting the substrate with an aqueous mixture of ammonium hydroxide (NH.sub.4 OH) and hydrogen peroxide (H.sub.2 O.sub.2) to selectively remove any titanium and/or titanium nitride in preference to the removal of cobalt silicide. The second step comprises contacting the substrate with an aqueous mixture of phosphoric acid (H.sub.3 PO.sub.4), acetic acid (CH.sub.3 COOH), and nitric acid (HNO.sub.3) to selectively remove cobalt and cobalt reaction products (other than cobalt silicide) in preference to the removal of cobalt silicide. In a preferred embodiment, the substrate is contacted by the respective etchant systems by spraying the respective etchant mixtures onto the substrate rather than immersing the substrate into baths containing the respective etchant mixtures.

REFERENCES:
patent: 5047367 (1991-09-01), Wei et al.
patent: 5567651 (1996-10-01), Berti et al.
patent: 5736461 (1998-04-01), Berti et al.

Affiliated with

Also associated with

Rating

Etch process selective to cobalt silicide for formation of integ does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etch process selective to cobalt silicide for formation of integ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etch process selective to cobalt silicide for formation of integ will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-859804