Etch process monitors for buried heterostructures

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156647, 156649, 156662, 29569L, H01L 21306, H01L 2100

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active

046523332

ABSTRACT:
This invention describes the use of etch process monitors or indicators to improve the reproducibility of etching hourglass shaped mesas for buried heterostructure laser/amplifier structures or integrated optical components in III-V compounds (e.g. GaAs/AlGaAs or InP/InGaAsP).

REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 3844858 (1974-11-01), Bean
patent: 4099305 (1978-07-01), Cho et al.
patent: 4257011 (1981-03-01), Nakamura et al.
patent: 4341010 (1982-07-01), Tijburg
patent: 4366569 (1982-12-01), Hirao et al.
patent: 4426702 (1984-01-01), Yamashita et al.
"Localized GaAs Etching with Acidic Hydrogen Peroxide Solts", by Don Shaw, Journal of Electro Chem Society, 4-1981, vol. 128, No. 4, pp. 874,876,878,880.
"Buried Multi-Hetero Structure GaAlAs Laser", Proceedings of 13th Conference on Solid State Devices, Tokyo, 1981, Japanese Journal of App. Physics, vol. 21, (1982), pp. 353-358.
"GaAs-Ga.sub.l-x Al.sub.x As Buried Heterostructure Injection Lasers" Journal of Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.

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