Etch process for forming high aspect ratio trenched in silicon

Details Etch process for forming high aspect ratio trenched in silicon Etch process for forming high aspect ratio trenched in silicon

1997-12-05

2000-10-03

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 252 791, 438714, 438734, 438694, H01L 2100

Patent

active

061272787

ABSTRACT:
A multistep etch process for forming high aspect ratio trenches in silicon having a silicon oxide and/or silicon nitride hardmask. In a first step, an etch composition of HBr and oxygen is used, depositing a passivation layer on the sidewalls and producing slightly tapered openings. In the second step, an etch composition of a fluorine-containing gas such as SF.sub.6, HBr and oxygen is used, producing more vertical openings at a high etch rate. The taper of the openings during the second step can be controlled by adjusting the relative amount of HBr or SF.sub.6 employed. This process is a clean process that does not require cleaning of the etch chamber between etch steps.

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